The device is designed for general-purpose switching applications and is ideal for cases where low power consumption and fast switching speed are required.
This article discusses the technical specifications of ADG417BR, its features, and its applications in various electronic products.
Technical Specifications: ADG417BR is an obsolete switch circuit with a multiplexer/demultiplexer circuit of 1:1. It has a maximum on-state resistance of 35 Ohm with no channel-to-channel matching specification. The device operates at a single supply voltage of 12V or dual supply voltage of ±15V. The switch time of the device is maximum 160ns (Ton) and 100ns (Toff). The channel capacitance of the device is 6pF (CS(off)) and 6pF (CD(off)). It has charge injection of 7pC and maximum current leakage of 250pA. The device operates in the temperature range of -40°C to 85°C.
Features: One of the key features of ADG417BR is its low on-state resistance, making it suitable for low power applications. The device also has a fast switching speed that is suitable for high-speed applications. It has low charge injection and channel capacitance, making it ideal for precision applications. Furthermore, ADG417BR has a low current leakage, enabling the device to consume less power while in the off state. The device is available in an 8-SOIC package, which is small and easy to use.
Applications: ADG417BR can be applied to various electronic devices, including but not limited to audio and video equipment, communication systems, industrial equipment, and medical devices. In audio and video equipment, the device can be used for switching audio and video signals. In communication systems, the device can be used for routing signals between different modules. In industrial equipment, the device can be used for switching outputs of different sensors. In medical devices, the device can be used for switching different electrical signals.
Conclusion: ADG417BR is a versatile SPST switch that is suitable for a wide range of applications. The device is characterized by its low on-state resistance, fast switching speed, low charge injection and channel capacitance, and low current leakage. With these features, the device is well-suited for switching low power and high-speed signals in various electronic devices.
