Infineon's IHW25N120R2FKSA1 IGBT offers high power and reliability for industrial applications
Infineon Technologies has launched a new Insulated Gate Bipolar Transistor (IGBT), the IHW25N120R2FKSA1, that delivers high power and reliability for industrial applications. The IHW25N120R2FKSA1 is a 1200V, 50A, 365W TO247-3 IGBT that uses Non-Punch Through (NPT) technology to provide improved performance and efficiency. This IGBT is ideal for a wide range of industrial applications, such as motor drives, welding equipment, and uninterruptible power supplies.
Infineon Technologies, a leading manufacturer of power semiconductors, has introduced its latest IGBT, the IHW25N120R2FKSA1. This high-performance device is designed for use in industrial applications that require high power and reliability. The IHW25N120R2FKSA1 is a 1200V, 50A, 365W IGBT that uses Non-Punch Through (NPT) technology to offer improved performance and efficiency.
One of the key features of the IHW25N120R2FKSA1 is its high power handling capability. With a maximum collector current (Ic) of 50A and a pulsed collector current (Icm) of 75A, this IGBT is capable of delivering a maximum power of 365W. This makes it suitable for use in high-power industrial applications such as motor drives, welding equipment, and uninterruptible power supplies.
The IHW25N120R2FKSA1 also features a low collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V and 25A. This low Vce(on) value helps to reduce power dissipation and improve overall system efficiency. In addition, the IGBT has a low switching energy of 1.59mJ and a gate charge of 60.7nC. These features help to improve switching performance and reduce switching losses.
The IHW25N120R2FKSA1 is also designed to offer high reliability in harsh industrial environments. It has an operating temperature range of -40°C to 175°C, making it suitable for use in extreme temperature conditions. The device also has a Td(on/off) of -/324ns at 25°C, which ensures fast switching and minimizes the risk of thermal runaway.
The IHW25N120R2FKSA1 is packaged in a TO-247-3 package and is designed for through-hole mounting. The device is also available in a PG-TO247-3 package. With its high power handling capability, improved efficiency, and high reliability, the IHW25N120R2FKSA1 is an ideal choice for a wide range of industrial applications.
In conclusion, Infineon Technologies' new IHW25N120R2FKSA1 IGBT offers high power and reliability for industrial applications. With its advanced NPT technology, low Vce(on), low switching energy, and high-temperature tolerance, this IGBT is an ideal choice for high-power industrial applications. The IHW25N120R2FKSA1 is now available for purchase, and Infineon Technologies is committed to providing high-quality products and excellent customer support to its customers.
