The IXFH30N60Q MOSFET is a TO-247AD package with a drain to source voltage of 600V and a continuous drain current of 30A at 25°C. The MOSFET features a low on-resistance of 230 mOhm at 500mA and a gate charge of 125nC at 10V. With a maximum power dissipation of 500W at Tc, the device can operate in a wide temperature range from -55°C to 150°C (TJ).
Applications:
The IXFH30N60Q MOSFET is ideal for use in a variety of industrial applications, including power supplies, motor drives, and welding equipment. Its high power handling capability and low on-resistance make it a suitable choice for high-frequency switching and high-current applications. The device's TO-247AD package allows for easy mounting and provides improved thermal performance, making it an excellent choice for applications where heat dissipation is critical.
Conclusion:
IXYS' IXFH30N60Q MOSFET offers high power handling capability and low on-resistance, making it an ideal choice for a wide range of industrial applications. With its exceptional performance and reliability, the device is poised to become a go-to component for power designers looking for a high-performance N-Channel MOSFET.
