This device, part of the company's UltraFET™ series, offers excellent switching performance and low on-resistance, making it an ideal choice for a variety of industrial, automotive, and consumer electronics applications.
ON Semiconductor's HUF75333P3 MOSFET is a high-performance N-channel MOSFET designed for use in power electronics applications. With a drain to source voltage (Vdss) of 55V and a maximum continuous drain current (Id) of 66A at 25°C, the HUF75333P3 is capable of handling high power loads while maintaining low on-resistance. The device features a maximum on-resistance of 16 mOhm at 66A and 10V, ensuring high efficiency and low power dissipation.
One of the key features of the HUF75333P3 MOSFET is its fast switching performance, with a maximum gate charge (Qg) of 85nC at 20V. This enables the device to operate at high frequencies, making it an ideal choice for power electronics applications that require fast switching speeds. The device also features a maximum operating temperature range of -55°C to 175°C, making it suitable for use in harsh environments.
The HUF75333P3 MOSFET is available in a TO-220-3 through-hole package, making it easy to integrate into existing circuit designs. The device is also RoHS compliant, ensuring that it meets the latest environmental standards.
With its high-performance characteristics and broad range of applications, the HUF75333P3 MOSFET is an ideal choice for a variety of industries, including automotive, industrial, and consumer electronics. The device can be used in a wide range of applications, including power supplies, motor control, lighting, and battery management systems.
Overall, the HUF75333P3 MOSFET from ON Semiconductor is a versatile and high-performance component that offers excellent switching performance, low on-resistance, and a wide operating temperature range. With its ability to handle high power loads and fast switching speeds, the HUF75333P3 is an ideal solution for a variety of power electronics applications in various industries.
