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STP90N4F3 - A High-Performance N-Channel MOSFET for Efficient Power Management

2023-05-31

The company has developed numerous products that have shaped the electronics industry in significant ways. One of its greatest products is the STripFET™ III series of power MOSFETs. Among them, the STP90N4F3 is a high-performance N-channel MOSFET that operates at 40V with a continuous drain current of 80A. This article will explore the specifications of the STP90N4F3 and its potential applications in electronic systems. 

The STP90N4F3 is a robust MOSFET that utilizes the latest STripFET™ III technology to deliver exceptional performance in power management applications. The device is manufactured using MOSFET (Metal Oxide) technology, which provides high input impedance, low noise, and minimal power dissipation resulting in improved overall efficiency. With its low Rds On (6.5 mOhm @ 40A, 10V), this MOSFET is ideal for applications that require high power density and low power losses. One of the best features of the STP90N4F3 is its compatibility with a wide range of voltage requirements. 

The MOSFET has a maximum drain-source voltage (Vdss) of 40V, making it suitable for use in a variety of voltage requirements. It is also compatible with different gate drive voltage levels (up to 10V), which makes it easy to match with a microcontroller, gate driver, or other control circuits. The STP90N4F3 features a gate threshold voltage (Vgs(th)) of 4V, ensuring reliable operation with a minimal input voltage. This characteristic makes the MOSFET suitable for use in battery-powered applications or products that require low-voltage control signals. 

Additionally, the MOSFET has a maximum gate-source voltage rating of ±20V, which provides additional headroom for the designer's input signal. As with any MOSFET, the STP90N4F3 has a gate charge (Qg) characteristic that affects its switching performance. With a maximum gate charge of 54nC @ 10V, this MOSFET can deliver fast switching speeds while minimizing switching losses. The input capacitance (Ciss) of the MOSFET is also noteworthy, with a maximum of 2200pF @ 25V. 

This capacitance characteristic can influence the MOSFET's performance in high-frequency applications, making it perfect for power switching applications. The STP90N4F3 is an ideal device for numerous applications such as motor controllers, DC-DC converters, and voltage regulators, due to its high current and voltage ratings. It is suitable for use in power supplies, electric vehicles, robotics, and other applications where high power density, high efficiency, and reliable operation are essential. 

STP90N4F3

In conclusion, the STP90N4F3 is a high-performance power MOSFET that offers a variety of benefits for numerous applications. Its low Rds On, compatibility with different voltage levels, and fast switching speeds make it ideal for high-power electronics. It is compatible with various control circuits, making it a versatile component that can be used in several applications. The STP90N4F3 can be applied to numerous systems, from hobby electronic projects to professional-grade applications, where high-power density, low losses, and reliability are significant considerations.

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