This product's advanced technology ensures a reliable and high-performance operation, being suitable for various applications in the consumer or industrial markets. Article Content: The SIA431DJ-T1-GE3 is a high-quality power MOSFET that can handle up to 12A of continuous current with a 20V Drain to Source Voltage (Vdss). Its P-Channel TrenchFET® technology ensures a low on-state resistance (Rds On) of 25 mOhm at 6.5A and 4.5V, being ideal for high-efficiency power conversion applications. Additionally, this MOSFET device features a low gate charge of only 60nC at 8V, making it suitable for fast switching applications, such as DC-DC converters, load switches, and power management units.
The SIA431DJ-T1-GE3's compact PowerPAK® SC-70-6 Single Package is designed to minimize space on circuit boards, making it an ideal choice for designing portable electronic devices. With an optimized input capacitance (Ciss) of 1700pF at 10V, this MOSFET device is suited for applications requiring low input capacitance and high switching speed. Furthermore, its wide operating temperature range of -55°C to 150°C (TJ) ensures stable performance in harsh environments.
This MOSFET device is a powerful option for integration into various types of electronics, from battery-powered devices, computers, and smartphones, to electric vehicles, and renewable energy systems. Thanks to its high-current rating and low-resistance, the SIA431DJ-T1-GE3 can drive high current loads with fast switching times, improving efficiency and reducing power losses. In conclusion, the Vishay Siliconix MOSFET with P-Channel TrenchFET® technology, SIA431DJ-T1-GE3, is an excellent option for those seeking high-performance, low-power consumption MOSFET options for designing electronic devices. Its advanced design and features make it suitable for a vast range of electronic applications, from consumer electronics to industrial machinery. With fast switching times, high-current capabilities, and reliable operation, it is an option worth considering for your next project.
